NTJD1155LT1G, Двойной МОП-транзистор, N и P Дополнение, 1.3 А, 8 В, 0.13 Ом, 4.5 В, 1 В

The NTJD1155LT1G is a P and N-channel Power MOSFET particularly suited for portable electronic equipment's where low control signals, low battery voltages and high load currents are needed. The P-channel device is specifically designed as a load switch using state-of-the-art Trench technology. The N-channel, with an external resistor (R1), functions as a level-shift to drive the P-channel. The N-channel MOSFET has internal ESD protection and it can be driven by logic signals as low as 1.5V. The NTJD1155L operates on supply lines from 1.8 to 8V and can drive loads up to 1.3A with 8V applied to both VIN and VON/OFF.

• Extremely low RDS (ON) P-channel load switch MOSFET
• Level shift MOSFET is ESD protected
• Low profile, small footprint package
• 1.5 to 8V ON/OFF range
• -55 to 150°C Operating junction temperature range

Полупроводники - Дискретные\Транзисторы\МОП-транзисторы

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