NDS9952A, Двойной МОП-транзистор, N и P Канал, 3.7 А, 30 В, 0.06 Ом, 10 В, 1.7 В

The NDS9952A is a dual N/P-channel enhancement-mode MOSFET produced using high cell density and DMOS technology. This high density process is especially tailored to provide superior switching performance and minimize ON-state resistance. The device is particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.

• High density cell design for extremely low RDS (ON)
• High power and current handling capability in a widely used surface-mount package

Полупроводники - Дискретные\Транзисторы\МОП-транзисторы

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