MRF1K50H-TF4, РЧ полевой транзистор, 135 В, 1.667 кВт, 1.8 МГц, 500 МГц, NI-1230H-4S

This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.

• High drain--source avalanche energy absorption capability
• Unmatched input and output allowing wide frequency range utilization
• Device can be used single--ended or in a push--pull configuration
• Characterized from 30 to 50 V for ease of use
• Suitable for linear application
• Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
• Recommended driver: MRFE6VS25N (25 W)
• Included in NXP product longevity program with assured supply for a minimum of 15 years after launch

Полупроводники - Дискретные\Транзисторы\РЧ Полевые Транзисторы

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