DS1245W-100+, NVRAM, SRAM, 1 МБ, 128К x 8бит, 100 нс, EDIP
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DS1245W-100+, NVRAM, SRAM, 1 МБ, 128К x 8бит, 100 нс, EDIP

DS1245W-100+, NVRAM, SRAM, 1 МБ, 128К x 8бит, 100 нс, EDIP

картинка DS1245W-100+, NVRAM, SRAM, 1 МБ, 128К x 8бит, 100 нс, EDIP
2 850 руб.
Производитель
Maxim Semiconductor

Цена 2 850 руб. за 1 шт

Количество
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  • Полное описание

The DS1245W-100+ is a 3.3V 1024K non-volatile SRAM in 32 pin EDIP package. It is fully static, non-volatile SRAM organized as 131.072 words by 8bits. Each NV SRAM has a self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. When such a condition occurs lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. Device can be used in place of existing 128K x 8 static RAMs directly conforming to popular bytewide 32pin DIP standard. Device in the PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete non-volatile SRAM module. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

• Supply voltage range is 3V to 3.6V
• Operating temperature range from 0°C to 70°C
• Data is automatically protected during power loss
• Replaces 128K x 8 volatile static RAM EEPROM or flash memory
• Unlimited write cycles, low power CMOS
• Read and write access times of 100ns
• Lithium energy source is electrically disconnected to retain freshness
• Replaceable snap-on PowerCap provides lithium backup battery
• Standardized pinout for all non-volatile SRAM products
• Detachment feature on PowerCap allows easy removal using a regular screwdriver

Полупроводники - Микросхемы\Память\Энергонезависимая RAM



Технические параметры

Тип памятиsram
Минимальная Рабочая Температура0 C
Максимальная Рабочая Температура70 C
Максимальное Напряжение Питания3.6В
Минимальное Напряжение Питания
Количество Выводов32вывод(-ов)
Время Доступа100нс
Стиль Корпуса Микросхемы ПамятиEDIP
Размер Памяти1МБ
Конфигурация Памяти NVRAM128К x 8бит
Вес, г17.11