MB85RS128BPNF-G-JNE1, NVRAM, FRAM, 128 Кбит, 16К x 8бит, SPI, SOP

The MB85RS128BPNF-G-JNE1 is a 128-Kbit SPI Ferroelectric Random Access Memory (FRAM) chip in a configuration of 16384 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85RS128B is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS128B can be used for 10?? read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E?PROM. MB85RS128B does not take long time to write data like Flash memories or E?PROM and MB85RS128B takes no wait time.

• Data retention - 10 years
• Operating power supply voltage - 2.7 to 3.6V
• Low power consumption

Полупроводники - Микросхемы\Память\Энергонезависимая RAM

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