H11G1M, Оптопара высоковольтная с транзисторным выходом (составной транзистор) [DIP-6]

The H11G1M is a 6-pin high voltage photodarlington-type optically Coupled Optocoupler consists of gallium-arsenide infrared emitting diode coupled with a silicon Darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics. It is suitable for CMOS logic interface, telephone ring detector, low input TTL interface and replace pulse transformer.

• 100µA at 80°C Maximum low leakage current
• 850V Maximum working insulation voltage
• 6000V High allowable overvoltage

Технические параметры