HGTG11N120CND, Транзистор IGBT 1200В 43А 298Вт [TO-247]
![картинка HGTG11N120CND, Транзистор IGBT 1200В 43А 298Вт [TO-247]](/upload/iblock/7b2/7b2f2ee9b653aec31db8f83f32a2689c.jpg "картинка HGTG11N120CND, Транзистор IGBT 1200В 43А 298Вт [TO-247] являющийся официальным дистрибьютором в России")
- Производитель
- ON Semiconductor
- Полное описание
The HGTG11N120CND is a 1200V N-channel IGBT with anti-parallel hyper fast diode. It is in a non-punch through (NPT) IGBT design. This NPT series is a new member of the MOS gated high voltage switching IGBT family. IGBT combines the best features of MOSFET and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. Offers lower conduction loss and lower switching loss for designing high efficiency and reliable systems. Fairchild offers an extensive portfolio of IGBT devices by various process technologies from 300V to greater than 1200V. Optimized manufacturing process results in better control and repeatability of the top-side structure, resulting in tighter specifications and better EMI performance. This product is general usage and suitable for many different applications.
• 340ns at TJ = 150°C Fall time
Технические параметры
| Технология/семейство | npt |
| Наличие встроенного диода | да |
| Максимальное напряжение КЭ ,В | 1200 |
| Максимальный ток КЭ при 25C, A | 43 |
| Импульсный ток коллектора (Icm), А | 80 |
| Напряжение насыщения при номинальном токе, В | 2.4 |
| Максимальная рассеиваемая мощность, Вт | 298 |
| Время задержки включения (td(on)) при при 25C, нс | 23 |
| Время задержки выключения (td(off)) при при 25C, нс | 180 |
| Рабочая температура (Tj), C | -55…+150 |
| Корпус | to-247 |
| Вес, г | 7.5 |